It is useful to understand the radiation response of the transistors to find better design strategies for radiation hardness. Noriyuki Iwamuro, in Wide Bandgap Semiconductor Power Devices, 2019. Its degradation under irradiation is the primary cause for functional failures of bipolar integrated devices. This paper presents a preliminary discussion on the related mechanism. The lateral PNP bipolar transistor is a radiation-sensitive structure in bipolar integrated devices. Figure 1 shows a simplified amplifier input stage using bipolar transistors. Ic/Ib (1) The value is fixed for a given transistor and operating condition. The degradation of the current gain of the bipolar transistor caused by the gamma irradiation after the neutron pre-irradiation would be greater than that of the neutron irradiation after the gamma pre-irradiation, and the difference is more obvious in PNP transistor than in NPN transistor. The Bipolar Junction Transistor Fundamentals Ideal Transistor Analysis Reading: Chapter 10, 11.1 Spring 2003 EE130 Lecture 15, Slide 2 Bipolar Junction Transistors (BJTs) Over the past 3 decades, the higher layout density and low-power advantage of CMOS technology has eroded away the BJT’s dominance in integrated-circuit products. The emitter injection efficiency factor is the hole contribution of the emitter current (majority carriers), IE,p/IE. The beta () of a transistor, or transistor current gain, is the ratio of the transistor’s collector current (Ic) to its base current (Ib), as shown in Equation 1. The experimental results show that when the collector-emitter voltage is constant and the collector current is extremely low, the current gain degradation of the bipolar transistor is relatively large, and the current gain increases with the collector current. Under the condition that the collector-emitter voltage is constant, the variation curve of the bipolar transistor current gain with the collector current is measured, and the influence of different irradiation order of neutron/ gamma on the current gain of the bipolar transistor is studied. In this paper, CFBR-II fast neutron reactor (China's second fast neutron pulse reactor) and Co-60 device are used to carry out experiments on different sequential neutrons/gamma irradiated bipolar transistors. Simulation of Ionizing/Displacement Synergistic Effects on NPN Bipolar Transistors Irradiated by Mixed Neutrons and Gamma Rays Science and Technology of.
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